Excelitas Tech
Silicon photodiode TO-46 spectral response between 330 and 720nm
Luna Optoelectronics
Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg
Photoconductive Cell, Hermetically Sealed, TO-8
Optek / TT Electronics
Sensor, Opto Switch Assembly, Transmissive, Single Channel, 5.1mm, 30V, 50mA
HONEYWELL
Diode, Infrared Emitter; Side Looking; 880 nm; 1.7 V; 20 mA; -40 degC; 85 degC
Detector; NDIR Gas Sensing; Dual AnalogOutput; TO-5; HC; Leads
Detector, Phototransistor; T-1; NPN; 20deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA
PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55
Detector, Phototransistor; TO-46; NPN; 90/18 deg; 30 V (Min.); 0.4 V (Max.)
Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg
Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA; -55 degC; 125
Omron Automation
Sensor, Slot Dark-On, T-Shape, Through Beam, NPN, 5 to 24VDC, 5mm, 35 mA
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
TC SLOT PMS PNP D-ON L SHAPE
PHOTO TRANSISTOR PLASTIC T-1
Photocell; 600 Kilohms (Min.); 550 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO-
SENS OPTO SLOT 3.18MM TRANS C-MT
PHOTOTRANS. W/BASE-EMITTER RES.
Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm
Photo Diode; Peak Reflow Compatible (260 C)
Photoconductive Cell, CDS
PHOTOCELL
Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2
Silicon photodiode; 6mm ceramic; IR blocking; blue enhanced; wide field of view
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current
Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV
Silicon photodiode; long T1 package; fastresponse; dark current; intermediate FOV
OSRAM Opto
Opto SFH 203 P IR + Visible Light Si Photodiode, 75 deg, Thru Hole 5mm package
Opto SFH 229 Full Spectrum Si Photodiode, 17 deg, Through Hole 3mm package
NTE ELECTRONICS
NTE Electronics, Inc.
Photoconductive Cell, Hermetically Sealed, TO-18
Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5
CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5
Photocell; 100 Kilohms (Min.); 550 nm; 170 Vpeak (Max.); 500 mW @ 25 degC; TO-
Photodiode, Planar; Clear Epoxy Dome Package; 180 muA (Typ.); 0.40 V (Typ.); 2.0
Photocell, Hermetically Packaged
Photoconductive Cell; 34 Kilohms (Typ.); 500 Kilohms (Min.); 0.80 (Typ.)
HI POWER OUTMED SPEEDTO-46 FLAT LENS
Thermopile Detector; 75 Kilohms (Typ.); TPS 333 Series
Optoelectronics, Detector; Pyroelectric Dual Element for Intrusion Alarm; TO-5
Siliconix / Vishay
TSFF5210 IR LED, 870nm, T-1 3/4 (5mm) Through Hole package
Detector, Phototransistor; Side-LookingPlastic; NPN; 50 deg; 30 V; 0.4 V; 100
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V
Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC
Detector, PhotoDarlington; Side-LookingPlastic; 50 deg; 15 V; 1.1 V; 1 mA (Min
Pyroelectric Infrared Detectors - Single and Dual Channel Detectors
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
VISHAY
OPTOCOUPLER LOGIC-OUT OPEN COLLECTOR DC-IN 1-CH 8-PIN PDIP TUBE
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
PINNED PHOTO CELL
Photocell, Pinned
HERMETIC PHOTOCELL
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
EATON
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C
H11A1 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin DIP
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV